Samsung begins mass production of QLC 9th-generation V-NAND
Samsung has announced the mass production of its groundbreaking one-terabit (Tb) quad-level cell (QLC) 9th-generation vertical NAND (V-NAND). This follows the successful rollout of the triple-level cell (TLC) version earlier this year.
Samsung’s QLC 9th-generation V-NAND brings several innovations, including the industry’s highest layer count achieved through its Channel Hole Etching technology and a double stack structure. This new NAND offers an 86 percent higher bit density compared to the previous generation, further optimizing performance for AI-driven enterprise SSD applications.